IDENTIFICATION OF SILICON-NITRIDE INGAAS INTERFACE STATES

Electrical characterization of the SiNx/InGaAs and SiN x/Si interfaces was carried out by high-frequency capacitance-voltage (C-V) measurements (1 MHz). Two impurity levels, regardless of substrate nature, have been identified and attributed to silicon dangling bond defects, such as ≡Si0 and ≡Si-. Electron spin resonance measurements, carried out both at room temperature and at 77 K, confirmed the presence of defects such as ≡Si0 surrounded by Si bonds.