OBSERVATION OF MULTIPLE SILICON DANGLING BOND CONFIGURATIONS IN SILICON-NITRIDE

被引：46

作者：

JOUSSE, D

KANICKI, J

STATHIS, JH

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 11期

关键词：

D O I：

10.1063/1.101558

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1043 / 1045

页数：3

共 12 条

[1] CHARGE TRAPPING IN SILICON-RICH SI3N4 THIN-FILMS [J].

BUCHANAN, DA ;

ABRAM, RA ;

MORANT, MJ .

SOLID-STATE ELECTRONICS, 1987, 30 (12) :1295-1301

[2] DANGLING BONDS IN MEMORY-QUALITY SILICON-NITRIDE FILMS [J].

FUJITA, S ;

SASAKI, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) :398-402

[3] INTERFACE TRAPS AND PB CENTERS IN OXIDIZED (100) SILICON-WAFERS [J].

GERARDI, GJ ;

POINDEXTER, EH ;

CAPLAN, PJ ;

JOHNSON, NM .

APPLIED PHYSICS LETTERS, 1986, 49 (06) :348-350

[4] CALCULATIONS OF THE G-VALUE AND LINEWIDTH OF THE ELECTRON-SPIN-RESONANCE SIGNAL IN AMORPHOUS-SILICON NITRIDE [J].

ISHII, N ;

OOZORA, S ;

KUMEDA, M ;

SHIMIZU, T .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 114 (02) :K111-K114

[5] ELECTRON-SPIN-RESONANCE STUDY OF DEFECTS IN PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE [J].

JOUSSE, D ;

KANICKI, J ;

KRICK, DT ;

LENAHAN, PM .

APPLIED PHYSICS LETTERS, 1988, 52 (06) :445-447

[6]

KANICKI J, 1987, ELECTROCHEM SOC P, V87, P261

[7] ELECTRONIC-STRUCTURE OF HYDROGENATED AND UNHYDROGENATED AMORPHOUS SINX (0-LESS-THAN-X-LESS-THAN-1.6) - A PHOTOEMISSION-STUDY [J].

KARCHER, R ;

LEY, L ;

JOHNSON, RL .

PHYSICAL REVIEW B, 1984, 30 (04) :1896-1910

[8] NATURE OF THE DOMINANT DEEP TRAP IN AMORPHOUS-SILICON NITRIDE [J].

KRICK, DT ;

LENAHAN, PM ;

KANICKI, J .

PHYSICAL REVIEW B, 1988, 38 (12) :8226-8229

[9] ELECTRICALLY ACTIVE POINT-DEFECTS IN AMORPHOUS-SILICON NITRIDE - AN ILLUMINATION AND CHARGE INJECTION STUDY [J].

KRICK, DT ;

LENAHAN, PM ;

KANICKI, J .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) :3558-3563

[10] DEFECTS IN AMORPHOUS-SILICON - A NEW PERSPECTIVE [J].

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1986, 57 (23) :2979-2982

← 1 2 →