NATURE OF THE DOMINANT DEEP TRAP IN AMORPHOUS-SILICON NITRIDE

被引：91

作者：

KRICK, DT ^{[1
]}

LENAHAN, PM ^{[1
]}

KANICKI, J ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.38.8226

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8226 / 8229

页数：4

共 27 条

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