INTERMIXING AT PB/SI(111) AND PB/SI(001) INTERFACES STUDIED WITH ELECTRON-ENERGY-LOSS SPECTROSCOPY

被引:28
作者
ZHAO, RG
JIA, JF
YANG, WS
机构
[1] Department of Physics, Peking University
来源
PHYSICAL REVIEW B | 1993年 / 48卷 / 08期
关键词
D O I
10.1103/PhysRevB.48.5333
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Pb/Si interfaces prepared by deposition of Pb onto the clean Si(111)7 X 7 and Si(001)2 X 1 surfaces, as well as oxygen-contaminated Pb/Si interfaces prepared by deposition of Pb onto the oxygen-contaminated Si(111)7 X 7 and Si(001)2 X 1 surfaces, have been studied with electron-energy-loss spectroscopy in conjunction with low-energy electron diffraction and Auger electron spectroscopy. The results show that, in contrast with its generally accepted properties, Pb intermixes strongly with Si at the Pb/Si(111) and Pb/Si(001) interfaces, forming a unique intermixed interfacial phase. However, at the oxygen-contaminated interfaces no evidence of such intermixing could be found.
引用
收藏
页码:5333 / 5337
页数:5
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