SCHOTTKY-BARRIER INHOMOGENEITY AT EPITAXIAL NISI2 INTERFACES ON SI(100)

被引：187

作者：

TUNG, RT

LEVI, AFJ

SULLIVAN, JP

SCHREY, F

机构：

[1] ATandT Bell Laboratories, Murray Hill

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.66.72

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The Schottky-barrier height (SBH) of an epitaxial NiSi2 layer grown on Si(100) is shown to depend critically on the morphology of the interface. Single-crystal, uniform, planar NiSi2/Si(100) layers have a much lower (n-type) SBH than that of interfaces which are made up of inclined (111) facets. Interfaces with both planar <100> sections and inclined <111> sections exhibit electrical behavior expected of a spatially inhomogeneous SB. We suggest that interface atomic structure determines SBH formation.

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页码：72 / 75

页数：4

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