INFLUENCE OF S AND SE ON THE SCHOTTKY-BARRIER HEIGHT AND INTERFACE CHEMISTRY OF AU CONTACTS TO GAAS

被引：64

作者：

WALDROP, JR

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期

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D O I：

10.1116/1.583039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1197 / 1201

页数：5

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