CARRIER CAPTURE ON DEFECTS IN MULTIBAND SEMICONDUCTORS

被引：12

作者：

BOURGOIN, JC

ZAZOUI, M

机构：

[1] Groupe de Physique des Solides, Universite Paris 7, Tour 23, 75251 Paris CEDEX 05

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.45.11324

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We analyze electron capture on a defect that exhibits no electron-phonon interaction. In this ease, capture occurs by a cascade mechanism via the defect excited states. In direct-band-gap materials, when the temperature is too high to allow the filling of the GAMMA-excited states at the bottom of conduction band, capture takes place via the excited states of a higher band, provided that they are deep enough. Experimental evidence for capture via the excited states of the L and X bands is provided for several defects or impurities in InP, GaAs, and related alloys.

引用

页码：11324 / 11327

页数：4

共 13 条

[1]

BHATTACHARYA PK, 1979, I PHYS C SER, V45, P199

[2]

Bourgoin J., 1983, POINT DEFECTS SEMICO

[3] DONORS IN SEMICONDUCTORS AND METASTABILITY [J].

BOURGOIN, JC ;

VONBARDELEBEN, HJ .

PHYSICAL REVIEW B, 1989, 40 (14) :10006-10008

[4]

BOURGOIN JC, 1990, PHYSICS DX CTR GAAS

[5] DIRECT EVIDENCE OF THE DX CENTER LINK TO THE L-CONDUCTION-BAND MINIMUM IN GAALAS [J].

CALLEJA, E ;

GOMEZ, A ;

MUNOZ, E .

APPLIED PHYSICS LETTERS, 1988, 52 (05) :383-385

[6]

CHOUDHURY ANM, 1979, IOP C P, V45, P211

[7] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].

HENRY, CH ;

LANG, DV .

PHYSICAL REVIEW B, 1977, 15 (02) :989-1016

[8] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J].

LANG, DV ;

LOGAN, RA .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) :1053-1066

[9]

LANNOO M, 1990, PHYSICS DX CTR GAAS, P209

[10] CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J].

LAX, M .

PHYSICAL REVIEW, 1960, 119 (05) :1502-1523

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