CHANNELLED-SUBSTRATE BURIED HETEROSTRUCTURE INGAASP INP LASERS WITH VAPOR-PHASE EPITAXIAL BASE STRUCTURE AND LIQUID-PHASE EPITAXIAL REGROWTH

被引：26

作者：

WILT, DP

KARLICEK, RF

STREGE, KE

DAUTREMONTSMITH, WC

DUTTA, NK

FLYNN, EJ

JOHNSTON, WD

NELSON, RJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 03期

关键词：

D O I：

10.1063/1.333998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：710 / 712

页数：3

共 11 条

[1] ENHANCED INDIUM-PHOSPHIDE SUBSTRATE PROTECTION FOR LIQUID-PHASE EPITAXY GROWTH OF INDIUM-GALLIUM-ARSENIDE-PHOSPHIDE DOUBLE HETEROSTRUCTURE LASERS [J].

BESOMI, P ;

WILSON, RB ;

WAGNER, WR ;

NELSON, RJ .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) :535-539

[2]

BESOMI P, UNPUB

[3]

BEURRIER HR, UNPUB

[4]

Borghini N., UNPUB

[5]

IMAI H, 1982, FUJITSU SCI TECH J, V18, P4

[6]

IMAI H, 1982, APPL PHYS LETT, V47, P583

[7]

ISHIKAWA H, 1982, IEEE J QUANTUM ELECT, V18, P1704, DOI 10.1109/TMTT.1982.1131310

[8] V-GROOVED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP/INP LASER BY ONE-STEP EPITAXY [J].

ISHIKAWA, H ;

IMAI, H ;

UMEBU, I ;

HORI, K ;

TAKUSAGAWA, M .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :2851-2853

[9] V-GROOVED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP-INP LASER [J].

ISHIKAWA, H ;

IMAI, H ;

TANAHASHI, T ;

NISHITANI, Y ;

TAKUSAGAWA, M ;

TAKAHEI, K .

ELECTRONICS LETTERS, 1981, 17 (13) :465-467

[10] INGAASP/INP (1.3-MU-M) BURIED-CRESCENT LASERS WITH SEPARATE OPTICAL CONFINEMENT [J].

LOGAN, RA ;

VANDERZIEL, JP ;

TEMKIN, H ;

HENRY, CH .

ELECTRONICS LETTERS, 1982, 18 (20) :895-896

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