DOWNSTREAM ATOMIC MONITORING FOR ABSOLUTE ETCH RATE DETERMINATIONS

被引：1

作者：

DANNER, DA ^{[1
]}

FLAMM, DL ^{[1
]}

MUCHA, JA ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 04期

关键词：

D O I：

10.1149/1.2119855

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：905 / 907

页数：3

共 11 条

[1]

[Anonymous], 1970, TABLES SPECTRAL LINE

[2]

Bosyakov M. N., 1979, Journal of Applied Spectroscopy, V30, P434, DOI 10.1007/BF00616172

[3] END-POINT DETERMINATION OF ALUMINUM CCL4 PLASMA ETCHING BY OPTICAL EMISSION-SPECTROSCOPY [J].

CURTIS, BJ ;

BRUNNER, HJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) :829-830

[4]

DANNER DA, UNPUB

[5] SPECTROSCOPIC STUDY OF RADIOFREQUENCY OXYGEN PLASMA STRIPPING OF NEGATIVE PHOTORESISTS .1. ULTRAVIOLET-SPECTRUM [J].

DEGENKOLB, EO ;

MOGAB, CJ ;

GOLDRICK, MR ;

GRIFFITHS, JE .

APPLIED SPECTROSCOPY, 1976, 30 (05) :520-527

[6] MICROWAVE DISCHARGE CAVITIES OPERATING AT 2450 MHZ [J].

FEHSENFELD, FC ;

EVENSON, KM ;

BROIDA, HP .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (03) :294-+

[7] THE REACTION OF FLUORINE-ATOMS WITH SILICON [J].

FLAMM, DL ;

DONNELLY, VM ;

MUCHA, JA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3633-3639

[8] STUDY OF OPTICAL EMISSION FROM AN RF PLASMA DURING SEMICONDUCTOR ETCHING [J].

HARSHBARGER, WR ;

PORTER, RA ;

MILLER, TA ;

NORTON, P .

APPLIED SPECTROSCOPY, 1977, 31 (03) :201-207

[9] ENDPOINT DETECTION IN PLASMA-ETCHING BY OPTICAL-EMISSION SPECTROSCOPY [J].

HIROBE, K ;

TSUCHIMOTO, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :234-235

[10]

IBBOTSON DE, UNPUB

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