STRUCTURE OF LAYERED CRYSTALS STUDIED BY HIGH-ENERGY ION-BEAMS

[1] ION DECHANNELING DUE TO LATTICE STRAINS IN SEMICONDUCTOR SUPER-LATTICES [J]. PHYSICAL REVIEW B, 1983, 28 (05): : 2328 - 2334

[2] CATASTROPHIC PLANAR DECHANNELING IN STRAINED-LAYER SUPERLATTICES [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 13 (1-3) : 39 - 44

[3] SUPER-LATTICE INTERFACE AND LATTICE STRAIN-MEASUREMENT BY ION CHANNELING [J]. PHYSICAL REVIEW B, 1983, 28 (07): : 4033 - 4036

[4] STRAIN IN ULTRATHIN EPITAXIAL-FILMS OF GE/SI(100) MEASURED BY ION-SCATTERING AND CHANNELING [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (06) : 664 - 667

[5] FELDMAN LC, 1982, MATERIALS ANAL ION C

[6] COMMENSURATE AND INCOMMENSURATE STRUCTURES IN MOLECULAR-BEAM EPITAXIALLY GROWN GEXSI1-X FILMS ON SI(100) [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1227 - 1229

[7] INXGA1-XAS-INYGA1-YAS STRAINED-LAYER SUPER-LATTICES - A PROPOSAL FOR USEFUL, NEW ELECTRONIC MATERIALS [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 5126 - 5128

[8] INCIDENT-ANGLE DEPENDENCE OF CATASTROPHIC DECHANNELING FOR STRAINED-LAYER SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (21) : 2355 - 2358

[9] STRAIN-MEASUREMENTS BY CHANNELING ANGULAR SCANS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 1020 - 1022

[10] ION CHANNELING STUDIES OF INGAAS GAAS STRAINED-LAYER SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 930 - 932

[1] ION DECHANNELING DUE TO LATTICE STRAINS IN SEMICONDUCTOR SUPER-LATTICES [J]. PHYSICAL REVIEW B, 1983, 28 (05): : 2328 - 2334

[2] CATASTROPHIC PLANAR DECHANNELING IN STRAINED-LAYER SUPERLATTICES [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 13 (1-3) : 39 - 44

[3] SUPER-LATTICE INTERFACE AND LATTICE STRAIN-MEASUREMENT BY ION CHANNELING [J]. PHYSICAL REVIEW B, 1983, 28 (07): : 4033 - 4036

[4] STRAIN IN ULTRATHIN EPITAXIAL-FILMS OF GE/SI(100) MEASURED BY ION-SCATTERING AND CHANNELING [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (06) : 664 - 667

[5] FELDMAN LC, 1982, MATERIALS ANAL ION C

[6] COMMENSURATE AND INCOMMENSURATE STRUCTURES IN MOLECULAR-BEAM EPITAXIALLY GROWN GEXSI1-X FILMS ON SI(100) [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1227 - 1229

[7] INXGA1-XAS-INYGA1-YAS STRAINED-LAYER SUPER-LATTICES - A PROPOSAL FOR USEFUL, NEW ELECTRONIC MATERIALS [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 5126 - 5128

[8] INCIDENT-ANGLE DEPENDENCE OF CATASTROPHIC DECHANNELING FOR STRAINED-LAYER SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (21) : 2355 - 2358

[9] STRAIN-MEASUREMENTS BY CHANNELING ANGULAR SCANS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 1020 - 1022

[10] ION CHANNELING STUDIES OF INGAAS GAAS STRAINED-LAYER SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 930 - 932