THE ELECTRONIC-PROPERTIES OF GAAS ALGAAS HETEROJUNCTIONS

[1] [Anonymous], 1978, HETEROSTRUCTURE LASE

[2] BAUER S, 1981, SURF SCI, V132, P479

[3] SPACE-CHARGE EFFECTS ON ELECTRON TUNNELING [J]. PHYSICAL REVIEW, 1966, 152 (02): : 683 - +

[4] Theory of Brilloum zones and symmetry properties of wave functions in crystals [J]. PHYSICAL REVIEW, 1936, 50 (01): : 58 - 67

[5] NEW DEVICE APPLICATIONS OF BANDEDGE DISCONTINUITIES IN MULTILAYER HETEROJUNCTION STRUCTURES [J]. SURFACE SCIENCE, 1983, 132 (1-3) : 527 - 539

[6] CHARGE CONTROL OF THE HETEROJUNCTION TWO-DIMENSIONAL ELECTRON-GAS FOR MESFET APPLICATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) : 790 - 795

[7] BINDING-ENERGIES OF WANNIER EXCITONS IN GAAS-GA1-XALXAS QUANTUM WELL STRUCTURES [J]. SOLID STATE COMMUNICATIONS, 1983, 45 (09) : 831 - 835

[8] ON GENERAL THEORY OF SURFACE STATES AND SCATTERING OF ELECTRONS IN SOLIDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (520): : 300 - &

[9] DEEP IMPURITIES IN SEMICONDUCTORS .1. EVANESCENT STATES AND COMPLEX BAND-STRUCTURE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (03): : 369 - 381

[10] ON THE INTERFACE CONNECTION RULES FOR EFFECTIVE-MASS WAVE-FUNCTIONS AT AN ABRUPT HETEROJUNCTION BETWEEN 2 SEMICONDUCTORS WITH DIFFERENT EFFECTIVE MASS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 551 - 553

[1] [Anonymous], 1978, HETEROSTRUCTURE LASE

[2] BAUER S, 1981, SURF SCI, V132, P479

[3] SPACE-CHARGE EFFECTS ON ELECTRON TUNNELING [J]. PHYSICAL REVIEW, 1966, 152 (02): : 683 - +

[4] Theory of Brilloum zones and symmetry properties of wave functions in crystals [J]. PHYSICAL REVIEW, 1936, 50 (01): : 58 - 67

[5] NEW DEVICE APPLICATIONS OF BANDEDGE DISCONTINUITIES IN MULTILAYER HETEROJUNCTION STRUCTURES [J]. SURFACE SCIENCE, 1983, 132 (1-3) : 527 - 539

[6] CHARGE CONTROL OF THE HETEROJUNCTION TWO-DIMENSIONAL ELECTRON-GAS FOR MESFET APPLICATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) : 790 - 795

[7] BINDING-ENERGIES OF WANNIER EXCITONS IN GAAS-GA1-XALXAS QUANTUM WELL STRUCTURES [J]. SOLID STATE COMMUNICATIONS, 1983, 45 (09) : 831 - 835

[8] ON GENERAL THEORY OF SURFACE STATES AND SCATTERING OF ELECTRONS IN SOLIDS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (520): : 300 - &

[9] DEEP IMPURITIES IN SEMICONDUCTORS .1. EVANESCENT STATES AND COMPLEX BAND-STRUCTURE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (03): : 369 - 381

[10] ON THE INTERFACE CONNECTION RULES FOR EFFECTIVE-MASS WAVE-FUNCTIONS AT AN ABRUPT HETEROJUNCTION BETWEEN 2 SEMICONDUCTORS WITH DIFFERENT EFFECTIVE MASS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 551 - 553