SPUTTERING OF SIO2 IN A XEF2 AND IN A CL-2 ATMOSPHERE

[11] MASS AND ENERGY-DISTRIBUTION OF PARTICLES SPUTTER ETCHED FROM SI IN A XEF2 ENVIRONMENT [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 174 - 176

[12] REACTIVE SPUTTERING OF SIMPLE CONDENSED GASES BY KEV IONS .3. KINETIC-ENERGY DISTRIBUTIONS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 5 (03) : 483 - 488

[13] HARING RA, 1984, THESIS LEIDEN

[14] ARGON-ION ASSISTED ETCHING OF SILICON BY MOLECULAR CHLORINE [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3813 - 3818

[15] THE CHEMICAL SPUTTERING OF SILICA BY AR+ IONS AND XEF2 [J]. SURFACE SCIENCE, 1984, 141 (2-3) : 409 - 416

[16] INVESTIGATION OF PLASMA-ETCHING MECHANISMS USING BEAMS OF REACTIVE GAS IONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02): : 349 - 352

[17] ION-ASSISTED ETCHING OF SILICON BY SF6 [J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1166 - 1168

[18] ATOMIC BEAM SOURCE FOR ENERGY RANGE OF 0.2-45 EV [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1968, 39 (08) : 1147 - &

[19] ION-ASSISTED ETCHING OF SILICON BY MOLECULAR CHLORINE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 487 - 491

[20] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J]. PHYSICAL REVIEW, 1969, 184 (02): : 383 - +

[11] MASS AND ENERGY-DISTRIBUTION OF PARTICLES SPUTTER ETCHED FROM SI IN A XEF2 ENVIRONMENT [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 174 - 176

[12] REACTIVE SPUTTERING OF SIMPLE CONDENSED GASES BY KEV IONS .3. KINETIC-ENERGY DISTRIBUTIONS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 5 (03) : 483 - 488

[13] HARING RA, 1984, THESIS LEIDEN

[14] ARGON-ION ASSISTED ETCHING OF SILICON BY MOLECULAR CHLORINE [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3813 - 3818

[15] THE CHEMICAL SPUTTERING OF SILICA BY AR+ IONS AND XEF2 [J]. SURFACE SCIENCE, 1984, 141 (2-3) : 409 - 416

[16] INVESTIGATION OF PLASMA-ETCHING MECHANISMS USING BEAMS OF REACTIVE GAS IONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02): : 349 - 352

[17] ION-ASSISTED ETCHING OF SILICON BY SF6 [J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1166 - 1168

[18] ATOMIC BEAM SOURCE FOR ENERGY RANGE OF 0.2-45 EV [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1968, 39 (08) : 1147 - &

[19] ION-ASSISTED ETCHING OF SILICON BY MOLECULAR CHLORINE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 487 - 491

[20] THEORY OF SPUTTERING .I. SPUTTERING YIELD OF AMORPHOUS AND POLYCRYSTALLINE TARGETS [J]. PHYSICAL REVIEW, 1969, 184 (02): : 383 - +