GROWTH OF SINGLE DOMAIN GAAS FLUORIDE SI STRUCTURES

被引：8

作者：

TSUTSUI, K

ASANO, T

ISHIWARA, H

FURUKAWA, S

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90428-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：398 / 402

页数：5

共 7 条

[1] FORMATION OF GAAS-ON-INSULATOR STRUCTURES ON SI SUBSTRATES BY HETEROEPITAXIAL GROWTH OF CAF2 AND GAAS [J].

ASANO, T ;

ISHIWARA, H ;

LEE, HC ;

TSUTSUI, K ;

FURUKAWA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02) :L139-L141

[2] FLATTENING THE SURFACE OF CAF2/SI(100) STRUCTURES BY POST-GROWTH ANNEALING [J].

ASANO, T ;

ISHIWARA, H ;

FURUKAWA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (07) :1193-1198

[3]

ASANO T, 1987, MATER RES SOC S P, V91, P337

[4]

ASANO T, 1988, 5TH INT WORKSH FUT E, P99

[5]

TSTUSUI K, 1988, I PHYS C SER, V91, P589

[6] ANTIPHASE DISORDER IN EPITAXIAL GAAS FILMS GROWN ON CAXSR1-XF2(100) WITH HIGHER CRYSTALLOGRAPHIC SYMMETRY [J].

TSUTSUI, K ;

ISHIWARA, H ;

FURUKAWA, S .

APPLIED PHYSICS LETTERS, 1986, 49 (25) :1705-1707

[7] LATTICE MATCHING AT ELEVATED SUBSTRATE-TEMPERATURE FOR GROWTH OF GAAS FILMS WITH GOOD ELECTRICAL-PROPERTIES ON CAXSR1-XF2/GAAS (100) STRUCTURES [J].

TSUTSUI, K ;

ISHIWARA, H ;

FURUKAWA, S .

APPLIED PHYSICS LETTERS, 1986, 48 (09) :587-589

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