SELECTIVE MOCVD GROWTH OF GAAS ON SI SUBSTRATE WITH SUPERLATTICE INTERMEDIATE LAYERS

被引：9

作者：

SOGA, T ^{[1
]}

SAKAI, S ^{[1
]}

UMENO, M ^{[1
]}

HATTORI, S ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ELECTR & COMP ENGN,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 02期

关键词：

D O I：

10.1143/JJAP.26.252

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：252 / 255

页数：4

共 16 条

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[8] A STUDY OF THE ORIENTATION DEPENDENCE OF GA(AL)AS GROWTH BY MOVPE [J].

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[9] ROOM-TEMPERATURE LASER OPERATION OF AIGAAS GAAS DOUBLE HETEROSTRUCTURES FABRICATED ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SAKAI, S ;

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[10] EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS ON SI GROWN BY MOCVD [J].

SOGA, T ;

HATTORI, S ;

SAKAI, S ;

UMENO, M .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :498-502

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