EFFECTS OF DEEP LOCALIZED-STATE DISTRIBUTION ON PHOTOCONDUCTIVE PROPERTIES IN AMORPHOUS-SILICON

被引：7

作者：

FURUKAWA, S

MATSUMOTO, N

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90601-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：385 / 388

页数：4

共 7 条

[1] ESTIMATION OF LOCALIZED STATE DISTRIBUTION PROFILES IN UNDOPED AND DOPED A-SI-H BY MEASURING SPACE-CHARGE-LIMITED CURRENT [J].

FURUKAWA, S ;

KAGAWA, T ;

MATSUMOTO, N .

SOLID STATE COMMUNICATIONS, 1982, 44 (06) :927-930

[2] FERMI-LEVEL EFFECT ON A-SI-H PHOTOCONDUCTIVITY [J].

KAGAWA, T ;

MATSUMOTO, N .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :465-468

[3] EFFECT OF RECOMBINATION ON TRANSIENT PHOTOCONDUCTIVITY IN A-SI-H [J].

KAGAWA, T ;

FURUKAWA, S ;

MATSUMOTO, N .

PHYSICAL REVIEW B, 1982, 26 (08) :4714-4716

[4] THE DENSITY OF STATES IN AMORPHOUS-SILICON DETERMINED BY SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS [J].

MACKENZIE, KD ;

LECOMBER, PG ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (04) :377-389

[5] THERMALIZATION AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].

ORENSTEIN, J ;

KASTNER, MA .

SOLID STATE COMMUNICATIONS, 1981, 40 (01) :85-89

[6]

Rose A., 1951, RCA REV, V12, P362

[7] EVIDENCE FOR EXPONENTIAL BAND TAILS IN AMORPHOUS-SILICON HYDRIDE [J].

TIEDJE, T ;

CEBULKA, JM ;

MOREL, DL ;

ABELES, B .

PHYSICAL REVIEW LETTERS, 1981, 46 (21) :1425-1428

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