NON-LANGEVIN RECOMBINATION IN DISORDERED DIELECTRICS

被引：9

作者：

ARKHIPOV, VI

PEROVA, IA

机构：

[1] UNIV MARBURG,ZENTRUM MAT WISSENSCH,W-3550 MARBURG,GERMANY

[2] MOSCOW ENGN PHYS INST,MOSCOW 115409,RUSSIA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1993年 / 26卷 / 08期

关键词：

D O I：

10.1088/0022-3727/26/8/022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Radiation-induced conductivity and space charge storage in thin films of disordered dielectrics during continuous irradiation by charged particles are considered. It is shown that the experimentally observed non-monotonic ('flash') kinetics of space charge density can be explained within the framework of a multiple trapping model of dispersive carrier transport and recombination with a non-Langevin recombination constant.

引用

页码：1301 / 1303

页数：3

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