DYNAMIC-MODEL FOR E-BEAM IRRADIATION OF MOS CAPACITORS

被引：14

作者：

CHURCHILL, JN ^{[1
]}

HOLMSTROM, FE ^{[1
]}

COLLINS, TW ^{[1
]}

机构：

[1] IBM CORP,DIV GEN PROD,SAN JOSE,CA 95193

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 06期

关键词：

D O I：

10.1063/1.326478

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dynamic properties of a metal-oxide-semiconductor (MOS) capacitor during e-beam irradiation was simulated using numerical techniques. Poisson's equation and the trap dynamics were used to calculate the time-dependent behavior of electrons, holes, and traps in the oxide during and after irradiation for various typical conditions. These results were used to calculate flatband shift versus gate bias voltage for steady-state as well as non-steady-state conditions. These exact computations confirm a previously published approximate two-layer model for irradiated MOS capacitors.

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收藏

页码：3994 / 4002

页数：9

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