CARBON TETRABROMIDE CARBON DOPING OF MOLECULAR-BEAM EPITAXIAL (GAAS) FILMS

被引：26

作者：

HOKE, WE

WEIR, DG

LEMONIAS, PJ

HENDRIKS, HT

机构：

[1] Raytheon Research Division, Lexington

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.111504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs films were doped with carbon up to a hole concentration of 1.3x10(20) cm(-3) using CBr4 vapor. The material quality of the heavily doped films was found to be better than that obtained using evaporated carbon. Improvements at the highest doping levels include better surface morphology, higher hole mobilities, significantly stronger photoluminescence, and near unity substitutional incorporation. Doping pulses created using CBr4 exhibited abrupt transitions. From the results it is suggested that the material quality of the films doped with evaporated carbon are degraded at high doping levels due to surface combination of reactive carbon species.

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页码：202 / 204

页数：3

相关论文

共 18 条

[1] IMPROVED PERFORMANCE OF CARBON-DOPED GAAS BASE HETEROJUNCTION BIPOLAR-TRANSISTORS THROUGH THE USE OF INGAP [J].

ABERNATHY, CR ;

REN, F ;

WISK, PW ;

PEARTON, SJ ;

ESAGUI, R .

APPLIED PHYSICS LETTERS, 1992, 61 (09) :1092-1094

[2] ULTRAHIGH DOPING OF GAAS BY CARBON DURING METALORGANIC MOLECULAR-BEAM EPITAXY [J].

ABERNATHY, CR ;

PEARTON, SJ ;

CARUSO, R ;

REN, F ;

KOVALCHIK, J .

APPLIED PHYSICS LETTERS, 1989, 55 (17) :1750-1752

[3] CARBON INCORPORATION IN METALORGANIC VAPOR-PHASE EPITAXY GROWN GAAS USING CHYX4-Y, TMG AND ASH3 [J].

BUCHAN, NI ;

KUECH, TF ;

SCILLA, G ;

CARDONE, F .

JOURNAL OF CRYSTAL GROWTH, 1991, 110 (03) :405-414

[4] HIGH-CARBON DOPING EFFICIENCY OF BROMOMETHANES IN GAS SOURCE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].

DELYON, TJ ;

BUCHAN, NI ;

KIRCHNER, PD ;

WOODALL, JM ;

SCILLA, GJ ;

CARDONE, F .

APPLIED PHYSICS LETTERS, 1991, 58 (05) :517-519

[5] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HEAVILY ACCEPTOR DOPED GAAS-LAYERS FOR GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

HOKE, WE ;

LEMONIAS, PJ ;

WEIR, DG ;

BRIERLEY, SK ;

HENDRIKS, HT ;

ADLERSTEIN, MG ;

ZAITLIN, MP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02) :856-858

[6] CARBON DOPING AND LATTICE CONTRACTION OF GAAS FILMS GROWN BY CONVENTIONAL MOLECULAR-BEAM EPITAXY [J].

HOKE, WE ;

LEMONIAS, PJ ;

WEIR, DG ;

HENDRIKS, HT ;

JACKSON, GS .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) :511-513

[7] CARBON DOPING OF MBE GAAS AND GA0.7AL0.3AS FILMS USING A GRAPHITE FILAMENT [J].

HOKE, WE ;

LEMONIAS, PJ ;

LYMAN, PS ;

HENDRIKS, HT ;

WEIR, D ;

COLOMBO, P .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :269-273

[8] GROWTH OF HIGH-QUALITY P-TYPE GAAS EPITAXIAL LAYERS USING CARBON TETRABROMIDE BY GAS-SOURCE MOLECULAR-BEAM EPITAXY AND MOLECULAR-BEAM EPITAXY [J].

HOUNG, YM ;

LESTER, SD ;

MARS, DE ;

MILLER, JN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03) :915-918

[9] CARBON DOPING FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS BY MOLECULAR-BEAM EPITAXY [J].

ITO, H ;

NAKAJIMA, O ;

ISHIBASHI, T .

APPLIED PHYSICS LETTERS, 1993, 62 (17) :2099-2101

[10] CARBON INCORPORATION IN (ALGA)AS, (ALIN)AS AND (GAIN)AS TERNARY ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ITO, H ;

ISHIBASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (6A) :L944-L947