POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS WITH 2-STEP ANNEALING PROCESS

被引：20

作者：

BONNEL, M

DUHAMEL, N

HAJI, L

LOISEL, B

STOEMENOS, J

机构：

[1] UNIV RENNES 1,F-22302 LANNION,FRANCE

[2] ARISTOTELIAN UNIV THESSALONIKI,DEPT PHYS,GR-54006 THESSALONIKI,GREECE

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 12期

关键词：

D O I：

10.1109/55.260786

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin film transistors (TFT's) were fabricated from poly-Si crystallized by a two-step annealing process on glass substrates. The combination of low-temperature furnace annealing and high-temperature rapid thermal annealing leads to a significant improvement in the material quality. The TFT's measured with this two-step annealing material exhibit better characteristics than those obtained by using conventional furnace annealing.

引用

页码：551 / 553

页数：3

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