THIN-FILM TRANSISTORS WITH POLYCRYSTALLINE SILICON PREPARED BY A NEW ANNEALING METHOD

被引：14

作者：

NAM, KS ^{[1
]}

SONG, YH ^{[1
]}

BAEK, JT ^{[1
]}

KONG, HJ ^{[1
]}

LEE, SS ^{[1
]}

机构：

[1] KOREA ADV INST SCI & TECHNOL, DEPT PHYS, TAEJON 305606, SOUTH KOREA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1993年 / 32卷 / 5A期

关键词：

POLY-SI FILMS; THIN-FILM TRANSISTORS; SOLID-PHASE CRYSTALLIZATION; NUCLEATION; GRAIN GROWTH; RTA; FURNACE ANNEALING;

D O I：

10.1143/JJAP.32.1908

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new annealing method, nucleation by rapid thermal annealing (RTA) and grain growth in furnace annealing, has been developed to obtain high-quality polycrystalline silicon (poly-Si) and to reduce the long annealing time for solid-phase crystallization (SPC) of amorphorus silicon (a-Si) film without a decrease in grain size. Poly-Si thin-film transistors (TFTs) were fabricated using this method and the electrical properties of poly-Si film were evaluated. We obtained higher field effect mobility (25 cm2/(V.s)) and better uniformity (less-than-or-equal-to 5% in 5-inch wafer) than those obtainable by the conventional furnace annealing.

引用

页码：1908 / 1912

页数：5

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