Studies of 1 and 2 keV electron beam lithography using silicon containing P(SI-CMS) resist

We have investigated low voltage electron beam lithograpy at 1 and 2 keV using P(SI-CMS) resist. With this system, 10:1 aspect ratio, 80-nm-wide polyimide fins, and >7:1 aspect ratio, 80-nm-wide Si fins were fabricated using 2 kV exposures. Analysis of our results suggests that observed reductions in the process latitude at 1 kV are not resist specific and can be understood on the basis of electron scattering, Experimental comparisons have been made by exposure of PMMA. In order to describe the results and help guide future development, we have conducted Monte Carlo simulations and experimental studies of the energy deposition in resists by 1 and 2 keV beams. (C) 1995 American Vacuum Society.