BA1-XKXBIO3 THIN-FILM JOSEPHSON TUNNEL-JUNCTIONS

被引：9

作者：

FINK, RL

HILBERT, C

KROGER, H

机构：

[1] Microelectronics and Computer Technology Corporation, Austin

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 25期

关键词：

D O I：

10.1063/1.109071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated sandwich-type Josephson tunnel junction devices from Ba1-xKxBiO3 electrodes and KNbO3 insulating barriers. Near ideal superconductor-insulator-superconductor tunnel junction pp structure was seen in high resistance devices at 4.2 K. Lower resistance devices with similar gap structure but much higher subgap leakage were hysteretic with switching voltages up to 5 mV. Hysteresis and well-defined gap structure persisted past 12 K. Magnetic field modulation of the zero-bias pair current showed Fraunhofer-like behavior with almost complete quenching at the nodes.

引用

页码：3360 / 3362

页数：3

共 10 条

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