THERMAL-EQUILIBRIUM PROCESSES IN UNDOPED AMORPHOUS-SILICON ALLOYS

被引：2

作者：

AGARWAL, SC ^{[1
]}

PAYSON, JS ^{[1
]}

GUHA, S ^{[1
]}

机构：

[1] ENERGY CONVERS DEVICES INC,TROY,MI 48084

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.36.9348

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9348 / 9350

页数：3

共 11 条

[1] AST DG, 1979, I PHYS C SER, V43, P1159
[2] BENNET MS, 1987, UNPUB P MATERIALS RE
[3] A COMPARATIVE-STUDY OF SINGLE AND DOUBLE CARRIER INJECTION IN AMORPHOUS-SILICON ALLOYS
DENBOER, W
HACK, M
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 491 - 494
[4] ENHANCEMENT OF OPEN CIRCUIT VOLTAGE IN HIGH-EFFICIENCY AMORPHOUS-SILICON ALLOY SOLAR-CELLS
GUHA, S
YANG, J
NATH, P
HACK, M
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 218 - 219
[5] ON THE MECHANISM OF LIGHT-INDUCED EFFECTS IN HYDROGENATED AMORPHOUS-SILICON ALLOYS
GUHA, S
YANG, J
CZUBATYJ, W
HUDGENS, SJ
HACK, M
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 588 - 589
[6] A CHEMICAL-BOND APPROACH TO DOPING, COMPENSATION AND PHOTOINDUCED DEGRADATION IN AMORPHOUS-SILICON
MULLER, G
KALBITZER, S
MANNSPERGER, H
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (04): : 243 - 250
[7] DETERMINATION OF THE GAP-STATE DISTRIBUTION OF HYDROGENATED AMORPHOUS-SILICON ALLOYS FROM SUB-BAND-GAP ABSORPTION-MEASUREMENTS
PAYSON, JS
GUHA, S
[J]. PHYSICAL REVIEW B, 1985, 32 (02): : 1326 - 1329
[8] THERMAL-EQUILIBRIUM DEFECT PROCESSES IN HYDROGENATED AMORPHOUS-SILICON
SMITH, ZE
ALJISHI, S
SLOBODIN, D
CHU, V
WAGNER, S
LENAHAN, PM
ARYA, RR
BENNETT, MS
[J]. PHYSICAL REVIEW LETTERS, 1986, 57 (19) : 2450 - 2453
[9] THERMAL EQUILIBRATION IN DOPED AMORPHOUS-SILICON
STREET, RA
KAKALIOS, J
HAYES, TM
[J]. PHYSICAL REVIEW B, 1986, 34 (04): : 3030 - 3033
[10] THERMAL-EQUILIBRIUM PROCESSES IN AMORPHOUS-SILICON
STREET, RA
KAKALIOS, J
TSAI, CC
HAYES, TM
[J]. PHYSICAL REVIEW B, 1987, 35 (03): : 1316 - 1333

← 1 2 →