Fabrication of thickness-controlled silicon nanowires and their characteristics

被引:23
作者
Namatsu, H
Takahashi, Y
Nagase, M
Murase, K
机构
[1] NTT LSI Lab, Kanagawa
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 06期
关键词
D O I
10.1116/1.588097
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A process for fabricating thin Si nanowires is proposed which can reduce the parasitic series resistance of the nanowire. The process includes electron cyclotron resonance plasma deposition of a SiO2 film through the openings of a patterned resist film. Since the SiO2 thickness decreases as the opening narrows, the SiO2 Nm can be made thinnest in the nanowire region. Therefore, during the following reactive-ion etching, the SiO2 film in this region is removed first and the Si layer is then selectively etched. A Si nanowire fabricated through this process shows quantized conductance at temperatures as high as 200 K. (C) 1995 American Vacuum Society.
引用
收藏
页码:2166 / 2169
页数:4
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