MFE CENTER - A CONFIGURATIONALLY BISTABLE DEFECT IN INP-FE

被引:40
作者
LEVINSON, M [1 ]
STAVOLA, M [1 ]
BESOMI, P [1 ]
BONNER, WA [1 ]
机构
[1] BELL COMMUN RES,MURRAY HILL,NJ 07974
来源
PHYSICAL REVIEW B | 1984年 / 30卷 / 10期
关键词
D O I
10.1103/PhysRevB.30.5817
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5817 / 5821
页数:5
相关论文
共 22 条
[1]   MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].
ANDERSON, PW .
PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955
[2]   SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1979, 43 (13) :956-959
[3]  
BENTON JL, 1983, DEFECTS SEMICONDUCTO, V2, P95
[4]   SULFUR-RELATED TRAP IN GAAS1-XPX [J].
CRAVEN, RA ;
FINN, D .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6334-6343
[5]   NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].
HENRY, CH ;
LANG, DV .
PHYSICAL REVIEW B, 1977, 15 (02) :989-1016
[6]   TRANSIENT CAPACITANCE STUDIES OF AN ELECTRON TRAP AT EC-ET=0.105EV IN PHOSPHORUS-DOPED SILICON [J].
JELLISON, GE .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5715-5719
[7]   RECOMBINATION ENHANCED DEFECT REACTIONS [J].
KIMERLING, LC .
SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1391-1401
[8]   TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].
LANG, DV ;
LOGAN, RA ;
JAROS, M .
PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030
[9]   RECOMBINATION-ENHANCED REACTIONS IN SEMICONDUCTORS [J].
LANG, DV .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1982, 12 :377-400
[10]   CHARGE-STATE-CONTROLLED STRUCTURAL RELAXATION OF THE EL2 CENTER IN GAAS [J].
LEVINSON, M .
PHYSICAL REVIEW B, 1983, 28 (06) :3660-3662