APPLICABILITY TEST FOR SYNCHROTRON-RADIATION X-RAY-LITHOGRAPHY IN 64-MB DYNAMIC RANDOM-ACCESS MEMORY FABRICATION PROCESSES

被引：12

作者：

FUJII, K

YOSHIHARA, T

TANAKA, Y

SUZUKI, K

NAKAJIMA, T

MIYATAKE, T

ORITA, E

ITO, K

机构：

[1] NEC CORP LTD,DIV LSI MFG,SAGAMIHARA,KANAGAWA 229,JAPAN

[2] SUMITOMO HEAVY IND LTD,QUANTUM EQUIPMENT TECHNOL LAB,TANASHI,TOKYO 188,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587580

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3949 / 3953

页数：5

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