ANTIREFLECTION COATING FOR LASER-DIODES

被引：4

作者：

SHIGIHARA, K

AOYAGI, T

KAKIMOTO, S

AIGA, M

OSTUBO, M

IKEDA, K

机构：

[1] Optoelectronics and Microwave Devices Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo 664

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 18期

关键词：

ANTIREFLECTION COATINGS; SEMICONDUCTOR JUNCTION LASERS;

D O I：

10.1049/el:19951101

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel design for an antireflection (AR) coating layer on facets of laser diodes (LDs) is proposed and the validity of the design is confirmed experimentally. The proposed novel AR coating, consisting of multilayers, is designable such that the characteristic matrix is equivalent to that of the ideal quarter wavelength single layer AR coating. Applying this idea to laser diodes with a lasing wavelength of 1.3 mu m and equivalent refractive index of 3.2, a very low reflectivity of 0.08% has been realised by the stratified three layers which consist of alumina (Al2O3, 9O2 Angstrom)/amorphous silicon (a-Si, 83 Angstrom)/ Al2O3 (902 Angstrom), deposited by electron beam evaporation.

引用

页码：1574 / 1576

页数：3

共 8 条

[1]

Born M., 1980, PRINCIPLES OPTICS

[2]

Eisenstein G, 1984, Appl Opt, V23, P161, DOI 10.1364/AO.23.000161

[3] MEASUREMENT OF THE MODAL REFLECTIVITY OF AN ANTI-REFLECTION COATING ON A SUPERLUMINESCENT DIODE [J].