RECOMBINATION PROPERTIES OF GOLD ACCEPTOR LEVEL IN SILICON USING IMPURITY PHOTOVOLTAIC EFFECT

被引：25

作者：

SAH, CT

TASCH, AF

SCHRODER, DK

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.19.71

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：71 / +

页数：1

共 6 条

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[2] PROPERTIES OF SILICON AND GERMANIUM .2. [J].

CONWELL, EM .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1281-1300

[3]

FAIRFIELD JM, 1965, J SOLID STATE ELECTR, V8, P685

[4]

SAH CT, 1967, PR INST ELECTR ELECT, V55, P654

SAH, CT ;

TASCH, AF .

[6] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J].

TRUMBORE, FA .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :205-233