SHOCKLEY-READ RECOMBINATION AND TRAPPING IN P-TYPE HGCDTE

The concepts and definitions of the steady-state minority-carrier lifetime, the steady-state majority-carrier lifetime, and the transient excess-carrier lifetime in semiconductors are reviewed. The effects that Shockley-Read centers have on these lifetimes are discussed, with emphasis given to the case of p-type Hg0.775Cd0.225Te containing traps. Measurements of the excess-carrier lifetime in Hg0.775Cd0.225Te (N a∼1×1016/cm3) using various experimental techniques are then summarized in view of the above definitions.