TRANSIENT AND STEADY-STATE EXCESS CARRIER LIFETIMES IN P-TYPE HGCDTE

被引：9

作者：

FASTOW, R

NEMIROVSKY, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 18期

关键词：

D O I：

10.1063/1.102160

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1882 / 1884

页数：3

共 15 条

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[8] THE CUTOFF WAVELENGTH AND MINORITY-CARRIER LIFETIME IN IMPLANTED N+-ON-BULK-P HG1-XCDXTE PHOTODIODES [J].

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JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) :2435-2439

[9] GATE-CONTROLLED HG1-XCDX TE PHOTODIODES PASSIVATED WITH NATIVE SULFIDES [J].

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[10] SCHOTTKY-BARRIER PHOTO-DIODES IN P HG1-XCDXTE [J].

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