THE EXCESS CARRIER LIFETIME IN P-TYPE HGCDTE MEASURED BY PHOTOCONDUCTIVE DECAY

被引：26

作者：

FASTOW, R

NEMIROVSKY, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 04期

关键词：

D O I：

10.1063/1.344390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1705 / 1710

页数：6

共 23 条

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