TEMPERATURE-DEPENDENCE OF BORON SURFACE SEGREGATION IN SI MOLECULAR-BEAM EPITAXIAL-GROWTH ON THE SI(111) ROOT-3X-ROOT-3-B SURFACE

被引：8

作者：

KUMAGAI, Y

ISHIMOTO, K

MORI, R

HASEGAWA, F

机构：

[1] Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki, 305

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

基金：

日本学术振兴会;

关键词：

D O I：

10.1016/0022-0248(95)80088-T

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Si epitaxial growth on a 1 monolayer (ML) boron-adsorbed Si(lll) surface was studied. Reflection high-energy electron diffraction (RHEED) intensity oscillations revealed that when the substrate temperature was below 600 degrees C, layer-by-layer growth with 4 ML high two-dimensional (2D) islands occurred as long as the surface segregated boron was more than 1/3 ML. On the other hand, layer-by-layer growth with normal 2 ML high 2D islands occurred at 600 degrees C even though the surface segregated boron was more than 1/3 ML. This result also indicates that the surface segregated boron suppresses the Si surface migration.

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页码：989 / 993

页数：5

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