ATOMIC LAYER DOPED FIELD-EFFECT TRANSISTOR FABRICATED USING SI MOLECULAR-BEAM EPITAXY

被引：54

作者：

NAKAGAWA, K

VANGORKUM, AA

SHIRAKI, Y

机构：

来源：

关键词：

D O I：

10.1063/1.101263

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1869 / 1871

页数：3

共 10 条

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[8] CONTROLLED ATOMIC LAYER DOPING AND ALD-MOSFET FABRICATION IN SI
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