GROWTH AND CHARACTERIZATION OF ATOMIC LAYER DOPING STRUCTURES IN SI

被引：60

作者：

VANGORKUM, AA ^{[1
]}

NAKAGAWA, K ^{[1
]}

SHIRAKI, Y ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.342794

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2485 / 2492

页数：8

共 37 条

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