BORON DELTA-DOPED SI METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY

被引：17

作者：

WU, SL ^{[1
]}

CARNS, TK ^{[1
]}

WANG, SJ ^{[1
]}

WANG, KL ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,DEVICE RES LAB,LOS ANGELES,CA 90024

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 10期

关键词：

D O I：

10.1063/1.110769

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A working p-type Si metal semiconductor field-effect transistor structure, utilizing a boron delta-doped layer as the conducting channel, has been successfully fabricated. Based on Hall measurements, a hole mobility bf 120 (180) cm2 V-1 s-1 at 300 (77) K has been obtained. The sheet carrier density of the delta layer was estimated to be about 1. 8 X 10(12) cm-2. It is shown that the delta field-effect transistor exhibits an extrinsic transconductance of 640 muS/mm for a gate length of 5 mum, and a high gate to drain breakdown voltage (> 18 V). By reducing the gate length to 1 mum, a transconductance of up to 3.2 mS/mm is expected.

引用

页码：1363 / 1365

页数：3

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