MBE GROWN UNDOPED SUPERLATTICE GATE AND MODULATION-DOPED BUFFER STRUCTURE FOR POWER FET APPLICATIONS

被引:2
作者
LIU, WC [1 ]
HSU, WC [1 ]
LOUR, WS [1 ]
WANG, RL [1 ]
CHANG, CY [1 ]
机构
[1] NATL CHIAO TUNG UNIV,INST ELECTR ENGN,HSINCHU,TAIWAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 06期
关键词
D O I
10.1143/JJAP.28.L904
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L904 / L906
页数:3
相关论文
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