SURFACE MORPHOLOGIES OF GAAS-LAYERS GROWN BY ARSENIC-PRESSURE-CONTROLLED MOLECULAR-BEAM EPITAXY

被引：43

作者：

WANG, YH

LIU, WC

CHANG, CY

LIAO, SA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期

关键词：

D O I：

10.1116/1.583319

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：30 / 36

页数：7

共 24 条

[1]

[Anonymous], COMMUNICATION

[2]

BACHRACH Z, 1981, J VAC SCI TECHNOL, V18, P754

[3] MICROTWINNING AND GROWTH DEFECTS IN GAAS MBE LAYERS [J].

BAFLEUR, M ;

MUNOZYAGUE, A ;

ROCHER, A .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) :531-538

[4] CRYSTAL, IMPURITY-RELATED AND GROWTH DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS [J].

BAFLEUR, M ;

MUNOZYAGUE, A .

THIN SOLID FILMS, 1983, 101 (04) :299-310

[5] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHAI, YG ;

CHOW, R .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :796-798

[6] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS [J].

CHAI, YG ;

WOOD, CEC ;

CHOW, R .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :800-803

[7]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[8] INTERFACE AND DOPING PROFILE CHARACTERISTICS WITH MOLECULAR-BEAM EPITAXY OF GAAS - GAAS VOLTAGE VARACTOR [J].

CHO, AY ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1812-1817

[9] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF HIGH-PURITY GAAS AND ALGAAS [J].

HEIBLUM, M ;

MENDEZ, EE ;

OSTERLING, L .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6982-6988

[10] INITIAL RESULTS OF A HIGH THROUGHPUT MBE SYSTEM FOR DEVICE FABRICATION [J].

HWANG, JCM ;

BRENNAN, TM ;

CHO, AY .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :493-496

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