SURFACE MORPHOLOGIES OF GAAS-LAYERS GROWN BY ARSENIC-PRESSURE-CONTROLLED MOLECULAR-BEAM EPITAXY

被引:43
作者
WANG, YH
LIU, WC
CHANG, CY
LIAO, SA
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期
关键词
D O I
10.1116/1.583319
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:30 / 36
页数:7
相关论文
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