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GAAS N+ I-DELTA-P+ IN+ BARRIER TRANSISTOR WITH ULTRA-THIN P+ ALGAAS BASE PREPARED BY MOLECULAR-BEAM EPITAXY
被引:13
作者
:
LIU, WC
论文数:
0
引用数:
0
h-index:
0
LIU, WC
WANG, YH
论文数:
0
引用数:
0
h-index:
0
WANG, YH
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
CHANG, CY
LIAO, SA
论文数:
0
引用数:
0
h-index:
0
LIAO, SA
机构
:
来源
:
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION
|
1986年
/ 133卷
/ 02期
关键词
:
D O I
:
10.1049/ip-i-1.1986.0010
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:47 / 48
页数:2
相关论文
共 11 条
[1]
MBE GROWN N+-I-DELTA(P+)-I-N+ GAAS V-GROOVE BARRIER TRANSISTOR
[J].
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
CHANG, CY
;
WANG, YH
论文数:
0
引用数:
0
h-index:
0
WANG, YH
;
LIU, WC
论文数:
0
引用数:
0
h-index:
0
LIU, WC
;
LIAO, SA
论文数:
0
引用数:
0
h-index:
0
LIAO, SA
.
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(03)
:123
-125
[2]
TEMPERATURE-DEPENDENT CHARACTERISTICS OF MBE-GROWN GAAS P+-V-P+-V-N+ REGENERATIVE SWITCHING DEVICE
[J].
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
CHANG, CY
;
WANG, YH
论文数:
0
引用数:
0
h-index:
0
WANG, YH
;
LIU, WC
论文数:
0
引用数:
0
h-index:
0
LIU, WC
;
LIAO, SA
论文数:
0
引用数:
0
h-index:
0
LIAO, SA
.
ELECTRONICS LETTERS,
1985,
21
(01)
:24
-25
[3]
OPTICAL AND ELECTRICAL-CURRENT GAIN IN AN AMORPHOUS-SILICON BULK BARRIER PHOTOTRANSISTOR
[J].
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
CHANG, CY
;
WU, BS
论文数:
0
引用数:
0
h-index:
0
WU, BS
;
FANG, YK
论文数:
0
引用数:
0
h-index:
0
FANG, YK
;
LEE, RH
论文数:
0
引用数:
0
h-index:
0
LEE, RH
.
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(03)
:149
-150
[4]
MODULATED BARRIER PHOTO-DIODE - A NEW MAJORITY-CARRIER PHOTODETECTOR
[J].
CHEN, CY
论文数:
0
引用数:
0
h-index:
0
CHEN, CY
;
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
;
GARBINSKI, PA
论文数:
0
引用数:
0
h-index:
0
GARBINSKI, PA
;
BETHEA, CG
论文数:
0
引用数:
0
h-index:
0
BETHEA, CG
;
LEVINE, BF
论文数:
0
引用数:
0
h-index:
0
LEVINE, BF
.
APPLIED PHYSICS LETTERS,
1981,
39
(04)
:340
-342
[5]
THEORY OF TRIANGULAR-BARRIER BULK UNIPOLAR DIODES INCLUDING MINORITY-CARRIER EFFECTS
[J].
HABIB, SE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES UNIV COLL SWANSEA,DEPT ELECT & ELECT ENGN,SWANSEA SA2 8PP,W GLAM,WALES
UNIV WALES UNIV COLL SWANSEA,DEPT ELECT & ELECT ENGN,SWANSEA SA2 8PP,W GLAM,WALES
HABIB, SE
;
BOARD, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES UNIV COLL SWANSEA,DEPT ELECT & ELECT ENGN,SWANSEA SA2 8PP,W GLAM,WALES
UNIV WALES UNIV COLL SWANSEA,DEPT ELECT & ELECT ENGN,SWANSEA SA2 8PP,W GLAM,WALES
BOARD, K
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(02)
:90
-96
[6]
KAZARINOV RF, 1982, APPL PHYS A-MATER, V28, P151, DOI 10.1007/BF00617980
[7]
BULK-BARRIER TRANSISTOR
[J].
MADER, H
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV MUNICH, LEHRSTUHL TECH ELEKTR, D-8000 MUNICH 2, FED REP GER
MADER, H
;
MULLER, R
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV MUNICH, LEHRSTUHL TECH ELEKTR, D-8000 MUNICH 2, FED REP GER
MULLER, R
;
BEINVOGL, W
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV MUNICH, LEHRSTUHL TECH ELEKTR, D-8000 MUNICH 2, FED REP GER
BEINVOGL, W
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(10)
:1380
-1386
[8]
PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY
[J].
MALIK, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
MALIK, RJ
;
AUCOIN, TR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
AUCOIN, TR
;
ROSS, RL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
ROSS, RL
;
BOARD, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
BOARD, K
;
WOOD, CEC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
WOOD, CEC
;
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
EASTMAN, LF
.
ELECTRONICS LETTERS,
1980,
16
(22)
:836
-837
[9]
FIELD-EFFECT TRANSISTOR VERSUS ANALOG TRANSISTOR (STATIC INDUCTION TRANSISTOR)
[J].
NISHIZAWA, JI
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,RES INST ELECT COMM,SENDAI,JAPAN
NISHIZAWA, JI
;
TERASAKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,RES INST ELECT COMM,SENDAI,JAPAN
TERASAKI, T
;
SHIBATA, J
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,RES INST ELECT COMM,SENDAI,JAPAN
SHIBATA, J
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
ED22
(04)
:185
-197
[10]
MAJORITY-CARRIER CAMEL DIODE
[J].
SHANNON, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Laboratories, Redhill, Surrey
SHANNON, JM
.
APPLIED PHYSICS LETTERS,
1979,
35
(01)
:63
-65
←
1
2
→
共 11 条
[1]
MBE GROWN N+-I-DELTA(P+)-I-N+ GAAS V-GROOVE BARRIER TRANSISTOR
[J].
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
CHANG, CY
;
WANG, YH
论文数:
0
引用数:
0
h-index:
0
WANG, YH
;
LIU, WC
论文数:
0
引用数:
0
h-index:
0
LIU, WC
;
LIAO, SA
论文数:
0
引用数:
0
h-index:
0
LIAO, SA
.
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(03)
:123
-125
[2]
TEMPERATURE-DEPENDENT CHARACTERISTICS OF MBE-GROWN GAAS P+-V-P+-V-N+ REGENERATIVE SWITCHING DEVICE
[J].
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
CHANG, CY
;
WANG, YH
论文数:
0
引用数:
0
h-index:
0
WANG, YH
;
LIU, WC
论文数:
0
引用数:
0
h-index:
0
LIU, WC
;
LIAO, SA
论文数:
0
引用数:
0
h-index:
0
LIAO, SA
.
ELECTRONICS LETTERS,
1985,
21
(01)
:24
-25
[3]
OPTICAL AND ELECTRICAL-CURRENT GAIN IN AN AMORPHOUS-SILICON BULK BARRIER PHOTOTRANSISTOR
[J].
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
CHANG, CY
;
WU, BS
论文数:
0
引用数:
0
h-index:
0
WU, BS
;
FANG, YK
论文数:
0
引用数:
0
h-index:
0
FANG, YK
;
LEE, RH
论文数:
0
引用数:
0
h-index:
0
LEE, RH
.
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(03)
:149
-150
[4]
MODULATED BARRIER PHOTO-DIODE - A NEW MAJORITY-CARRIER PHOTODETECTOR
[J].
CHEN, CY
论文数:
0
引用数:
0
h-index:
0
CHEN, CY
;
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
;
GARBINSKI, PA
论文数:
0
引用数:
0
h-index:
0
GARBINSKI, PA
;
BETHEA, CG
论文数:
0
引用数:
0
h-index:
0
BETHEA, CG
;
LEVINE, BF
论文数:
0
引用数:
0
h-index:
0
LEVINE, BF
.
APPLIED PHYSICS LETTERS,
1981,
39
(04)
:340
-342
[5]
THEORY OF TRIANGULAR-BARRIER BULK UNIPOLAR DIODES INCLUDING MINORITY-CARRIER EFFECTS
[J].
HABIB, SE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES UNIV COLL SWANSEA,DEPT ELECT & ELECT ENGN,SWANSEA SA2 8PP,W GLAM,WALES
UNIV WALES UNIV COLL SWANSEA,DEPT ELECT & ELECT ENGN,SWANSEA SA2 8PP,W GLAM,WALES
HABIB, SE
;
BOARD, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES UNIV COLL SWANSEA,DEPT ELECT & ELECT ENGN,SWANSEA SA2 8PP,W GLAM,WALES
UNIV WALES UNIV COLL SWANSEA,DEPT ELECT & ELECT ENGN,SWANSEA SA2 8PP,W GLAM,WALES
BOARD, K
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(02)
:90
-96
[6]
KAZARINOV RF, 1982, APPL PHYS A-MATER, V28, P151, DOI 10.1007/BF00617980
[7]
BULK-BARRIER TRANSISTOR
[J].
MADER, H
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV MUNICH, LEHRSTUHL TECH ELEKTR, D-8000 MUNICH 2, FED REP GER
MADER, H
;
MULLER, R
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV MUNICH, LEHRSTUHL TECH ELEKTR, D-8000 MUNICH 2, FED REP GER
MULLER, R
;
BEINVOGL, W
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV MUNICH, LEHRSTUHL TECH ELEKTR, D-8000 MUNICH 2, FED REP GER
BEINVOGL, W
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(10)
:1380
-1386
[8]
PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY
[J].
MALIK, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
MALIK, RJ
;
AUCOIN, TR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
AUCOIN, TR
;
ROSS, RL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
ROSS, RL
;
BOARD, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
BOARD, K
;
WOOD, CEC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
WOOD, CEC
;
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WALES,DEPT ELECT ENGN,SWANSEA SA2 8OO,W GLAMORGAN,WALES
EASTMAN, LF
.
ELECTRONICS LETTERS,
1980,
16
(22)
:836
-837
[9]
FIELD-EFFECT TRANSISTOR VERSUS ANALOG TRANSISTOR (STATIC INDUCTION TRANSISTOR)
[J].
NISHIZAWA, JI
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,RES INST ELECT COMM,SENDAI,JAPAN
NISHIZAWA, JI
;
TERASAKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,RES INST ELECT COMM,SENDAI,JAPAN
TERASAKI, T
;
SHIBATA, J
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,RES INST ELECT COMM,SENDAI,JAPAN
SHIBATA, J
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
ED22
(04)
:185
-197
[10]
MAJORITY-CARRIER CAMEL DIODE
[J].
SHANNON, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Laboratories, Redhill, Surrey
SHANNON, JM
.
APPLIED PHYSICS LETTERS,
1979,
35
(01)
:63
-65
←
1
2
→