GAAS N+ I-DELTA-P+ IN+ BARRIER TRANSISTOR WITH ULTRA-THIN P+ ALGAAS BASE PREPARED BY MOLECULAR-BEAM EPITAXY

被引:13
作者
LIU, WC
WANG, YH
CHANG, CY
LIAO, SA
机构
来源
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1986年 / 133卷 / 02期
关键词
D O I
10.1049/ip-i-1.1986.0010
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:47 / 48
页数:2
相关论文
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