BULK-BARRIER TRANSISTOR

被引:12
作者
MADER, H
MULLER, R
BEINVOGL, W
机构
[1] TECH UNIV MUNICH, LEHRSTUHL TECH ELEKTR, D-8000 MUNICH 2, FED REP GER
[2] SIEMENS AG, RES LABS, D-8000 MUNICH 83, FED REP GER
关键词
D O I
10.1109/T-ED.1983.21303
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1380 / 1386
页数:7
相关论文
共 14 条
[1]  
BETHE HA, 1942, MIT4212 RAD LAB REP
[2]   CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].
CROWELL, CR ;
SZE, SM .
SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&
[3]   THE CAMEL DIODE AS PHOTODETECTOR WITH HIGH INTERNAL GAIN [J].
GEORGOULAS, N .
ELECTRON DEVICE LETTERS, 1982, 3 (03) :61-63
[4]   THEORY OF TRIANGULAR-BARRIER BULK UNIPOLAR DIODES INCLUDING MINORITY-CARRIER EFFECTS [J].
HABIB, SE ;
BOARD, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (02) :90-96
[5]   PUNCH-THROUGH CURRENTS IN P+NP+ AND N+PN+ SANDWICH STRUCTURES .1. INTRODUCTION AND BASIC CALCULATIONS [J].
LOHSTROH, J ;
KOOMEN, JJM ;
VANZANTEN, AT ;
SALTERS, RHW .
SOLID-STATE ELECTRONICS, 1981, 24 (09) :805-814
[6]   ELECTRICAL-PROPERTIES OF BULK-BARRIER DIODES [J].
MADER, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) :1766-1771
[7]  
MULLER R, UNPUB TRANSITION BUL
[8]   FIELD-EFFECT TRANSISTOR VERSUS ANALOG TRANSISTOR (STATIC INDUCTION TRANSISTOR) [J].
NISHIZAWA, JI ;
TERASAKI, T ;
SHIBATA, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (04) :185-197
[9]   ANALYSIS OF STATIC CHARACTERISTICS OF A BIPOLAR-MODE SIT (BSIT) [J].
NISHIZAWA, JI ;
OHMI, T ;
CHEN, HL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (08) :1233-1244
[10]   THERMIONIC SATURATION OF DIFFUSION CURRENTS IN TRANSISTORS [J].
PERSKY, G .
SOLID-STATE ELECTRONICS, 1972, 15 (12) :1345-&