THEORY OF TRIANGULAR-BARRIER BULK UNIPOLAR DIODES INCLUDING MINORITY-CARRIER EFFECTS

被引：22

作者：

HABIB, SE ^{[1
]}

BOARD, K ^{[1
]}

机构：

[1] UNIV WALES UNIV COLL SWANSEA,DEPT ELECT & ELECT ENGN,SWANSEA SA2 8PP,W GLAM,WALES

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 02期

关键词：

D O I：

10.1109/T-ED.1983.21080

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：90 / 96

页数：7

共 8 条

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[3]

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[5] CHARGE INJECTION OVER TRIANGULAR BARRIERS IN UNIPOLAR SEMICONDUCTOR STRUCTURES [J].

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[6]

KAZARINOV RF, UNPUB J APPL PHYS

[7] PUNCH-THROUGH CURRENTS IN P+NP+ AND N+PN+ SANDWICH STRUCTURES .1. INTRODUCTION AND BASIC CALCULATIONS [J].

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SOLID-STATE ELECTRONICS, 1981, 24 (09) :805-814

[8] PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY [J].

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