APPLICATION OF SUPERLATTICE GATE AND MODULATION-DOPED BUFFER FOR GAAS POWER MESFET GROWN BY MBE

被引：1

作者：

LIU, WC ^{[1
]}

LOUR, WS ^{[1
]}

CHANG, CY ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR ENGN,HSINCHU,TAIWAN

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 49卷 / 03期

关键词：

D O I：

10.1007/BF00616861

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：321 / 324

页数：4

共 19 条

[1] LOW-NOISE MICROWAVE FETS FABRICATED BY MOLECULAR-BEAM EPITAXY [J].

BANDY, SG ;

COLLINS, DM ;

NISHIMOTO, CK .

ELECTRONICS LETTERS, 1979, 15 (08) :218-219

[2]

CHANG CY, 1985, IEEE EDL, V6, P23

[3] LOW-NOISE AND HIGH-POWER GAAS MICROWAVE FIELD-EFFECT TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

DILORENZO, JV ;

HEWITT, BS ;

NIEHAUS, WC ;

SCHLOSSER, WO ;

RADICE, C .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :346-349

[4] ELECTRON-MOBILITY IN SINGLE AND MULTIPLE PERIOD MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES [J].

DRUMMOND, TJ ;

KOPP, W ;

KEEVER, M ;

MORKOC, H ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1023-1028

[5] SUBSTRATE CURRENT IN GAAS-MESFETS [J].

EASTMAN, LF ;

SHUR, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (09) :1359-1361

[6]

GHOSH CL, 1984, IEEE ELECTR DEVICE L, V5, P3, DOI 10.1109/EDL.1984.25809

[7]

HIDE H, 1986, IEEE ELECTRON DEVICE, V7, P625

[8]

IMMORLICA AA, 1980, I PHYS C SER, V56, P423

[9] MICROWAVE-POWER GAAS MISFETS WITH UNDOPED ALGAAS AS AN INSULATOR [J].

KIM, B ;

TSERNG, HQ ;

SHIH, HD .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) :494-495

[10] GAAS N+ I-DELTA-P+ IN+ BARRIER TRANSISTOR WITH ULTRA-THIN P+ ALGAAS BASE PREPARED BY MOLECULAR-BEAM EPITAXY [J].

LIU, WC ;

WANG, YH ;

CHANG, CY ;

LIAO, SA .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1986, 133 (02) :47-48

← 1 2 →