NUMERICAL SIMULATIONS OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS

被引:10
作者
HACK, M
SHAW, J
机构
[1] Xerox Palo Alto Research Center, Palo Alto, CA 94304
关键词
D O I
10.1063/1.347028
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper we present results of two-dimensional numerical simulations of low voltage, high voltage, and vertical amorphous silicon transistors. The model input consists of one realistic density of states spectrum for undoped amorphous silicon, and one self-consistent set of model parameters for all devices. Our results are in good agreement with experimental data, and this good fit is based on a new model for the source and drain contacts. Our approach is to treat these contacts as consisting of a fixed resistance in series with a small potential barrier whose height is modulated by current flow. Finally we show that relatively small changes in the density of deep localized states significantly alter the simulated device characteristics.
引用
收藏
页码:5337 / 5342
页数:6
相关论文
共 15 条
[11]   AN ANALYTIC MODEL FOR CALCULATING TRAPPED CHARGE IN AMORPHOUS-SILICON [J].
SHAW, JG ;
HACK, M .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) :4562-4566
[12]   VERTICAL AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J].
SHAW, JG ;
HACK, M .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (03) :1576-1581
[13]   PHYSICS OF AMORPHOUS-SILICON BASED ALLOY FIELD-EFFECT TRANSISTORS [J].
SHUR, M ;
HACK, M .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3831-3842
[14]  
Thomson M. J., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P192
[15]  
TUAN HC, 1986, MATER RES SOC S P, V70, P651