IN-GAP OPTICAL-ABSORPTION OF AMORPHOUS SI3N4

被引：12

作者：

SEAGER, CH

KNAPP, JA

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 10期

关键词：

D O I：

10.1063/1.95068

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1060 / 1062

页数：3

共 14 条

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[4]

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AMER, NM .

PHYSICAL REVIEW B, 1982, 25 (08) :5559-5562

[7] PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND DETECTION [J].

JACKSON, WB ;

AMER, NM ;

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FOURNIER, D .

APPLIED OPTICS, 1981, 20 (08) :1333-1344

[8]

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[9] HYDROGEN CONCENTRATION PROFILES AND CHEMICAL BONDING IN SILICON-NITRIDE [J].

PEERCY, PS ;

STEIN, HJ ;

DOYLE, BL ;

PICRAUX, ST .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (01) :11-24

[10] AMORPHOUS SILICON-SILICON NITRIDE THIN-FILM TRANSISTORS [J].

POWELL, MJ ;

EASTON, BC ;

HILL, OF .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :794-796

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