TEMPERATURE EFFECTS IN ATOMIC MIXING OF METAL SILICON MULTILAYERS MEASURED BY SIMS

被引:15
作者
KING, BV [1 ]
TONN, DG [1 ]
TSONG, IST [1 ]
机构
[1] ARIZONA STATE UNIV, DEPT PHYS, TEMPE, AZ 85287 USA
关键词
D O I
10.1016/0168-583X(85)90442-2
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:607 / 615
页数:9
相关论文
共 25 条
[1]  
Burger R M, 1967, FUNDAMENTALS SILICON, V1
[2]   A 1ST ORDER DIFFUSION-APPROXIMATION TO ATOMIC REDISTRIBUTION DURING ION-BOMBARDMENT OF SOLIDS, .2. FINITE-RANGE APPROXIMATION [J].
CARTER, G ;
COLLINS, R ;
THOMPSON, DA .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1981, 55 (1-2) :99-110
[3]   THE DIFFUSION-APPROXIMATION IN ATOMIC MIXING [J].
COLLINS, R ;
MARSH, T ;
JIMENEZRODRIGUEZ, JJ .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :147-156
[4]   GROWTH-KINETICS AND GROWTH MECHANISMS FOR DISILICIDE LAYERS OBTAINED THROUGH IMPLANTATION [J].
DHEURLE, FM ;
PETERSSON, CS ;
TSAI, MY .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8765-8770
[5]   SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON [J].
FAIRFIEL.JM ;
MASTERS, BJ .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) :3148-&
[6]   REACTION-KINETICS OF MOLYBDENUM THIN-FILMS ON SILICON(111) SURFACE [J].
GUIVARCH, A ;
AUVRAY, P ;
BERTHOU, L ;
LECUN, M ;
BOULET, JP ;
HENOC, P ;
PELOUS, G ;
MARTINEZ, A .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) :233-237
[7]  
KING BV, 1984, P MAT RES SOC S, V27, P103
[8]   SOLUTE SEGREGATION AND PRECIPITATION UNDER HEAVY-ION BOMBARDMENT [J].
LAM, NQ ;
OKAMOTO, PR ;
JOHNSON, RA .
JOURNAL OF NUCLEAR MATERIALS, 1978, 78 (02) :408-418
[9]   ION-BEAM MIXING OF METAL-SEMICONDUCTOR EUTECTIC SYSTEMS [J].
LAU, SS ;
TSAUR, BY ;
VONALLMEN, M ;
MAYER, JW ;
STRITZKER, B ;
WHITE, CW ;
APPLETON, B .
NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :97-105
[10]  
Lucovsky G., 1979, Amorphous semiconductors, P215