ADVANCED QUALIFICATION TECHNIQUES

被引:28
作者
WINOKUR, PS
SHANEYFELT, MR
MEISENHEIMER, TL
FLEETWOOD, DM
机构
[1] Sandia National Laboratories, Department 1332, Albuquerque, New Mexico
关键词
D O I
10.1109/23.299796
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper demonstrates use of the Qualified Manufacturers List (QML) methodology to qualify commercial and military microelectronics for use in space applications. QML ''builds in'' the hardness of product through statistical process control (SPC) of technology parameters relevant to the radiation response, test structure to integrated circuit (IC) correlations, and techniques for extrapolating laboratory test results to low-dose-rate space scenarios. Each of these elements is demonstrated and shown to be a cost-effective alternative to expensive end-of-line IC testing. Several examples of test structure-to-IC correlations are provided and recent work on complications arising from transistor scaling and geometry is discussed. The use of a 10-keV x-ray wafer-level test system to support SPC and establish ''process capability'' is illustrated and a comparison of 10-keV x-ray and Co-60 gamma irradiations is provided for a wide range of CMOS technologies. The x-ray tester is shown to be cost-effective and its use in lot acceptance/qualification is recommended. Finally, a comparison is provided between MIL-STD-883, Test Method 1019.4, which governs the testing of packaged semiconductor microcircuits in the DoD, and ESA/SCC Basic Specification No. 22900, Europe's Total Dose Steady-State Irradiation Test Method. Test Method 1019.4 focuses on conservative estimates of MOS hardness for space and tactical applications, while Basic Specification 22900 focuses on improved simulation of low-dose-rate space environments.
引用
收藏
页码:538 / 548
页数:11
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