SELECTIVE GROWTH OF DIAMOND USING AN IRON CATALYST

被引：4

作者：

SHIMADA, Y

MACHI, Y

机构：

[1] Faculty of Engineering, Tokyo Denki University, Chiyoda-ku, Tokyo, 101, 2-2 Nishiki-cho, Kanda

来源：

关键词：

D O I：

10.1016/0925-9635(94)90193-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Selective growth of diamond was carried out on a silicon substrate with patterned iron films, using the r.f. plasma chemical vapour deposition method. The iron film was used to increase the nucleation density of diamond. In the photolithography process for patterning the iron film, the formation of Fe-C was caused by carbon atoms diffused from the photoresist film into the iron film during the baking of the photoresist film. It was confirmed that the presence of Fe-C is effective in enhancing diamond nucleation.

引用

页码：403 / 407

页数：5

共 10 条

[1] NUCLEATION AND GROWTH OF DIAMOND ON FESI2/SI SUBSTRATES BY HOT FILAMENT CHEMICAL VAPOR-DEPOSITION
GODBOLE, VP
NARAYAN, J
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (10) : 4944 - 4948
[2] SELECTIVE DEPOSITION OF DIAMOND CRYSTALS BY CHEMICAL VAPOR-DEPOSITION USING A TUNGSTEN-FILAMENT METHOD
HIRABAYASHI, K
TANIGUCHI, Y
TAKAMATSU, O
IKEDA, T
IKOMA, K
IWASAKIKURIHARA, N
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (19) : 1815 - 1817
[3] SELECTED-AREA DEPOSITION OF DIAMOND FILMS
INOUE, T
TACHIBANA, H
KUMAGAI, K
MIYATA, K
NISHIMURA, K
KOBASHI, K
NAKAUE, A
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (12) : 7329 - 7336
[4] SELECTIVE NUCLEATION AND GROWTH OF DIAMOND PARTICLES BY PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION
MA, JS
KAWARADA, H
YONEHARA, T
SUZUKI, J
WEI, J
YOKOTA, Y
HIRAKI, A
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (11) : 1071 - 1073
[5] MA JS, 1990, J CRYST GROWTH, V99, P1206, DOI 10.1016/S0022-0248(08)80109-1
[6] LARGE AREA DIAMOND SELECTIVE NUCLEATION BASED EPITAXY
MA, JS
YAGYU, H
HIRAKI, A
KAWARADA, H
YONEHARA, T
[J]. THIN SOLID FILMS, 1991, 206 (1-2) : 192 - 197
[7] LASER PATTERNING OF DIAMOND FILMS
NARAYAN, J
CHEN, X
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (08) : 3795 - 3801
[8] ANALYSIS OF DIAMOND PHASE IN HYDROGENATED HARD CARBON-FILM USING RADIO-FREQUENCY PLASMA-ETCHING
SHIMADA, Y
MUTSUKURA, N
MACHI, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (08) : 4019 - 4024
[9] SYNTHESIS OF DIAMOND USING FE CATALYSTS BY RF PLASMA CHEMICAL VAPOR-DEPOSITION METHOD
SHIMADA, Y
MUTSUKURA, N
MACHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (6B): : 1958 - 1963
[10] ENHANCED NUCLEATION AND GROWTH OF DIAMOND ON SIC BY PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION USING THIN METAL-FILMS
YEHODA, JE
FUENTES, RI
TSANG, JC
WHITEHAIR, SJ
GUARNIERI, CR
CUOMO, JJ
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (23) : 2865 - 2867

← 1 →