SYNTHESIS OF DIAMOND USING FE CATALYSTS BY RF PLASMA CHEMICAL VAPOR-DEPOSITION METHOD

Diamond growth was examined on a Fe/Si substrate in rf CH4 plasma. The Fe film, evaporated on a Si wafer, promotes the growth of diamond. Although the density of the diamond particle grown on a Si substrate was on the order of 10(6) cm-2, the Fe film enhanced the density to an order of 10(7) cm-2. The particle size was increased with the increase in the Fe film thickness, and indicated a maximum value at around 500 angstrom. At an initial stage in the diamond growth, it was confirmed that C and Fe atoms diffused deeply into the Fe film and the Si substrate, respectively, which was confirmed by X-ray photoelectron spectroscope measurements. It was also observed that the diamond particles exist at the interface between the Fe film and Si substrate.