DIFFUSION-INDUCED DEFECTS IN THIN SILICON FILMS (PRECIPITATION OF P DOPING METHOD ELECTRON TRASMISSION MICROSCOPY E)

被引：4

作者：

JOSHI, ML

MASTERS, BJ

DASH, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1965年 / 7卷 / 11期

关键词：

D O I：

10.1063/1.1754272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：306 / &

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[1] DIFFUSION-INDUCED IMPERFECTIONS IN SILICON
JOSHI, ML
WILHELM, F
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[2] FORMATION AND COMPOSITION OF SURFACE LAYERS AND SOLUBILITY LIMITS OF PHOSPHORUS DURING DIFFUSION IN SILICON
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[3] SILICON PHOSPHIDE PRECIPITATES IN DIFFUSED SILICON
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[4] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON
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[5] DIFFUSION-INDUCED DISLOCATIONS IN SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1909 - &
[6] ELECTRON DIFFRACTION FROM CRYSTALS CONTAINING STACKING FAULTS .2.
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[J]. PHILOSOPHICAL MAGAZINE, 1957, 2 (23): : 1303 - &