STUDY OF THE ENERGY RELAXATION-TIME OF HOT-ELECTRONS IN GAAS/GAA1AS HETEROSTRUCTURES

被引：9

作者：

VASS, E

机构：

来源：

PHYSICA B & C | 1985年 / 134卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(85)90367-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：337 / 341

页数：5

共 17 条

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[13] DIFFERENTIAL NEGATIVE-RESISTANCE CAUSED BY INTER-SUBBAND SCATTERING IN A TWO-DIMENSIONAL ELECTRON-GAS [J].

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LIVINGSTONE, A ;

KAWASHIMA, M ;

OKAMOTO, H ;

KUMABE, K .

SOLID STATE COMMUNICATIONS, 1983, 46 (07) :517-520

[14] WARM ELECTRON-SYSTEM IN THE N-ALGAAS/GAAS TWO-DIMENSIONAL ELECTRON-GAS [J].

TSUBAKI, K ;

SUGIMURA, A ;

KUMABE, K .

APPLIED PHYSICS LETTERS, 1985, 46 (08) :764-766

[15] THEORY OF THE INPUT POWER-DEPENDENCE OF THE ELECTRON HEATING IN N-INVERSION LAYERS [J].

VASS, E .

SOLID STATE COMMUNICATIONS, 1985, 55 (09) :847-849

[16] ENERGY-LOSS OF WARM AND HOT CARRIERS IN SURFACE INVERSION LAYERS OF POLAR SEMICONDUCTORS [J].

VASS, E ;

HESS, K .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1976, 25 (04) :323-325

[17]

ZLOBIN AM, 1970, SOV PHYS JETP-USSR, V31, P513

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